Persamaan Transistor Fet

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Type Designator: IRFZ44N

Type of Transistor: MOSFET

FET (Field Effect Transistor) atau sering disebut sebagai transistor efek medan mempunyai fungsi yang hampir sama dengan transistor bipolar. Meskipun demikian antara FET dan transistor bipolar terdapat beberapa perbedaan yang mendasar. Perbedaan utama antara kedua jenis transistor tersebut adalah bahwa dalam transistor bipolar arus output (IC) dikendalikan oleh arus input (IB).

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage Vds : 55 V

Maximum Gate-Source Voltage Vgs : 10 V

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Maximum Gate-Threshold Voltage Vgs(th) : 4 V

Maximum Drain Current Id : 41 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 62 nC

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: TO220AB

IRFZ44N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ44N Datasheet (PDF)

1.1. irfz44npbf.pdf Size:226K _update

PD - 94787B IRFZ44NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 17.5mΩ l Fully Avalanche Rated G l Lead-Free ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

1.2. irfz44n.pdf Size:100K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor

1.3. irfz44nlpbf irfz44nspbf.pdf Size:334K _update

IRFZ44NSPbF l IRFZ44NLPbF l ® l l D DSS l l l DS(on) Ω Description G ® D

1.4. irfz44ns 1.pdf Size:57K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features ve

1.5. irfz44n 1.pdf Size:52K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state re

1.6. irfz44ns 1.pdf Size:57K _international_rectifier

1.7. irfz44n 1.pdf Size:52K _international_rectifier

1.8. irfz44ns.pdf Size:151K _international_rectifier

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET® Power MOSFET Low-profile through-hole (IRFZ44NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET® Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely

1.9. irfz44n.pdf Size:100K _international_rectifier

PD - 94053 IRFZ44N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.10. irfz44n.pdf Size:145K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor contro

1.11. lirfz44n.pdf Size:252K _lrc

LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V LIRFZ44N RDS(ON), Vgs@10V, Ids@25A =17.5mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 10

Datasheet: IRFZ40, IRFZ40FI, IRFZ42, IRFZ44, IRFZ44A, IRFZ44E, IRFZ44EL, IRFZ44ES, 2SK2837, IRFZ44NL, IRFZ44NS, IRFZ45, IRFZ46N, IRFZ46NL, IRFZ46NS, IRFZ48N, IRFZ48NL.

LIST

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FET, Field Effect Transistor, Tutorial Includes:
FET basicsFET specsJFETMOSFETDual gate MOSFETPower MOSFETMESFET / GaAs FETHEMT & PHEMTFinFET technology

The field effect transistor, FET is a key semiconductor device for the electronics industry.

The FET used in many circuits constructed from discrete components in areas from RF technology to power control and electronic switching to general amplification.

However the major use for the field effect transistor, FET is within integrated circuits. In this application FET circuits are able to consume only very small levels of power, and this enables the huge very large scale integrated circuits to operate. If bipolar technology was used the power consumption would be orders of magnitude greater and the power generated far too large to accommodate within a single integrated circuit.

Apart from being used in integrated circuits, discrete versions of field effect transistors are available both as leaded devices and also surface mount devices.

Field Effect Transistor, FET history

Before the first FETs were introduced into the market, the concept had been known for a number of years. There had been many difficulties in realising this type of device and making it work.

Some of the early concepts for the field effect transistor were outlined in a paper by Lilienfield in 1926, and in another paper by Heil in 1935.

The next foundations were set in place during the 1940s at Bell Laboratories where the semiconductor research group was set up. This group investigated a number of areas pertaining to semiconductors and semiconductor technology, one of which was a device that would modulate the current flowing in a semiconductor channel buy placing an electric field close to it.

During these early experiments, the researchers were unable to make the idea work, turning their ideas to another idea and ultimately inventing another form of semiconductor electronics component: the bipolar transistor.

After this much of the semiconductor research was focussed on improving the bipolar transistor, and the idea for a field effect transistor was not fully investigated for some while. Now FETs are very widely used, providing the main active element in many integrated circuits. Without these electronic components electronics technology would be very different to what it is now.

Field Effect Transistor – the basics

The concept of the field effect transistor is based around the concept that charge on a nearby object can attract charges within a semiconductor channel. It essentially operates using an electric field effect - hence the name.

The FET consists of a semiconductor channel with electrodes at either end referred to as the drain and the source.

A control electrode called the gate is placed in very close proximity to the channel so that its electric charge is able to affect the channel.

In this way, the gate of the FET controls the flow of carriers (electrons or holes) flowing from the source to drain. It does this by controlling the size and shape of the conductive channel.

The semiconductor channel where the current flow occurs may be either P-type or N-type. This gives rise to two types or categories of FET known as P-Channel and N-Channel FETs.

In addition to this, there are two further categories. Increasing the voltage on the gate can either deplete or enhance the number of charge carriers available in the channel. As a result there are enhancement mode FET and depletion mode FETs.

As it is only the electric field that controls the current flowing in the channel, the device is said to be voltage operated and it has a high input impedance, usually many megohms. This can be a distinct advantage over the bipolar transistor that is current operated and has a much lower input impedance.

FET circuits

Field effect transistors are widely used in all forms of circuit from those used in circuits with discrete components, to those employed in integrated circuits.

Note on Field Effect Transistor Circuit Design:

The field transistor transistors can be used in many types of circuits although the three basic configurations are common source, common drain (source follower) and common gate. The circuit design itself if fairly straightforward and can be undertaken quite easily.

Read more about Field Effect Transistor Circuit Design

Field Effect Transistor types

There are many ways to define the different types of FET that are available. They may be categorised in a number of ways, but some of the major types of FET can be covered in the tree diagram below.

There are many different types of FET on the market for which there are various names. Some of the major categories are delayed below.

Junction FET, JFET: The junction FET, or JFET uses a reverse biased diode junction to provide the gate connection. Essentially a small diode is fabricated onto the channel semiconductor. In operation this is reverse biased and this means that it is effectively isolated from the channel - only the diode reverse current can flow between the two. The JFET is the most basic type of FET, and the one that was first developed. However it still provides excellent service in many areas of electronics.
Read more about . . . . junction field effect transistor, JFET.
Insulated Gate FET / Metal Oxide Silicon FET MOSFET: The MOSFET uses an insulated layer between the gate and the channel. Typically this is formed from a layer of oxide of the semiconductor. The name IGFET refers to any type of FET that has an insulated gate. The most common form of IGFET is the silicon MOSFET - Metal Oxide Silicon FET. Here, the gate is made of a layer of metal set down on the silicon oxide which in turn is on the silicon channel. MOSFETs are widely used in many areas of electronics and particularly within integrated circuits.
Read more about . . . . Metal Oxide Silicon FET, MOSFET.
Dual Gate MOSFET: This is a specialised form of MOSFET that has two gates in series along the channel. This enables some considerable performance improvements to be made, especially at RF, when compared to single gate devices. The second gate of the MOSFET provides additional isolation between the input and output, and in addition to this it can be used in applications like mixing / multiplication.
MESFET: The MEtal Silicon FET is normally fabricated using Gallium Arsenide and is often referred to as a GaAs FET. Often GaAsFETs are used for RF applications where they can provide high gain low noise performance. One of the drawbacks of GaAsFET technology results from the very small gate structure, and this makes its very sensitive to damage from static, ESD. Great care must be taken when handling these devices.
Read more about . . . . MESFET / GaAsFET.
HEMT / PHEMT: The High Electron Mobility Transistor and Pseudomorphic High Electron Mobility Transistor are developments of the basic FET concept, but developed to enable very high frequency operation. Although expensive, they enable very high frequencies and high levels of performance to be achieved.
FinFET: FinFET technology is now being used within integrated circuits to enable higher levels of integration to be achieved by allowing smaller feature sizes. As higher density levels are needed and it becomes increasingly difficult to realise ever smaller feature sizes, FinFET technology is being used more widely.
Read more about . . . . FinFET.
VMOS: VMOS standard for vertical MOS. It is a type of FET that uses a vertical current flow to improve the switching and current carrying performance. VMOS FETs are widely used for power applications.

Although there are some other types of field effect transistor that may be seen in the literature, often these types are trade names for a particular technology and they are variants of some of the FET types listed above.

FET specifications

Apart from selecting a particular type of field effect transistor for any given circuit, it is also necessary to understand the different specifications. In this way it is possible to ensure that the FET will operate to the required performance parameters.

FET specifications include everything from the maximum voltages and currents permissible to the capacitance levels and the transconductance. These all play a part in determining whether any particular FET is suitable for a given circuit or application.

Read more about . . . . FET specifications and datasheet parameters.

Field affect transistor technology can be used in a number of areas where bipolar transistors are not as suitable: each of these semiconductor devices has its own advantages and disadvantages, and can be used to great effect in many circuits. The field effect transistor has a very high input impedance and is a voltage driven device and this opens it up to being used in many areas.

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